Quantum Sensing Applications

Antiferromagnets

Ferromagnets have been utilized in memory devices for decades, but attention has only recently shifted to antiferromagnets. Their compensated spins make their magnetism more challenging to harness and detect. However, the minimal stray fields of antiferromagnets hold promise for enabling the development of ultradense memory storage. With the Qnami ProteusQ, we can visualize their remaining uncompensated spins, which are found at domain walls, crystalline edges, or within nanostructures.

Unconventional flexomagnetism in chromium oxide thin films

Applying inhomogeneous strain to chromium oxide thin films induces a strong vertical gradient of the Neel temperature inferred through scanning NV magnetometry measurements.

Nanoscale mechanics of domain walls

Scanning NV Magnetometry unveiled for the first time the nanoscale mechanics of antiferromagnetic domain walls opening new avenues for antiferromagnetic spintronics.

Topological defects in multiferroic antiferromagnetic materials

Qnami Quantilevers enabled the observation of topological defects in multiferroic antiferromagnets at rooom temperature for the first time.

Exotic antiferromagnetic spin cycloids in bismuth ferrite thin films

Scanning NV Magnetometry unlocks the characterization of the effects of strain and electrical fields on exotic antiferromagnetic spin textures in multiferroics.

Imaging non-collinear antiferromagnetic textures via single spin relaxometry—Nature Communications

The team led by Vincent Jacques demonstrates a new method to image spin textures in synthetic antiferromagnets using Qnami QuantileverMX probes.

Antiferromagnetic textures in BiFeO3controlled by strain and electric field – Nature Communications

Team of Prof. V.Garcia from CNRS/Thales shows electrical control of the magnetic states of BFO opening a new playground for low-power spintronics

Electric and antiferromagnetic chiral textures at multiferroic domain walls – Nature Materials

French research group led by Prof. M. Viret uses scanning NV magnetometry to reveal a novel type of chiral spin-textures occurring on BiFeO3’s domain-walls.

Purely antiferromagnetic magnetoelectric Random Access Memory – Nature Communication

D. Makarov and his team demonstrate the first antiferromagnetic memory that can be entirely manipulated and read electrically.
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