Antiferromagnetic Ram

In a experiment led by the group of Dr. Denys Makarov in Dresden, researchers from Germany and Switzerland suggested a promising new approach to magnetoelectric RAM, in which the storage layer is made of antiferromagnets.

Antiferromagnets have internal magnetic order, but the direction of their microscopic moments alternates between neighboring atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets externally invisible. This implies that information stored in antiferromagnetic moments cannot be measured by common magnetic probes.

Using the Quantilever MX, images of the magnetic domains at the surface of the antiferromagnetic layer could be recorded. The high-resolution microscopy data proved essential to back up key assumptions on the magnetic state of the surface.

Publication
T. Kosub et al,, Purely antiferromagnetic magnetoelectric Random Access Memory, Nature Communication 8, 13985 (2017).  (Open Access)

News article
New road towards a universal memory

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Scanning NV magnetometry reveals magnetic textures in 2D material CrBr3 in cryogenic environment

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Applying scanning NV magnetometry to cryogenic temperatures allowed Professor Wrachtrup and his collaborators to reveal magnetic domains and study their dynamics in atomically thin van der Waals magnets.

Characterization of room-temperature in-plane magnetization in thin flakes of CrTe2 with a single spin magnetometer

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Using Qnami QuantileverMX probes, the team led by Vincent Jacques identifies the only “van der Waals” material known to date where magnetic order occurs in a few atomic layers even at room temperature 

Spatial Resolution in Scanning NV Magnetometry – Technical Note

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This technical note explains how spatial resolution is defined in Scanning NV Magnetometry. For a given distance d between the NV center and the scanned surface, the best achievable lateral spatial resolution is 0.86 d.

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