Antiferromagnetic bits measured with Scanning NV magnetometry

Image credit: Nanoletters, https://pubs.acs.org/cms/10.1021/acs.nanolett.4c03044/asset/images/large/nl4c03044_0005.jpeg
Led by Denys Makarov at HZDR, this study reveals a way to create antiferromagnetic bits. The team patterned thin film chromium oxide into nanodots and revealed binary magnetic states in this antiferromagnetic material. The measurements by Peter Rickhaus at the Qnami Application Lab show results that resemble those from ferromagnetic MRAMs observed with scanning NV microscopy (SNVM). This similarity hints that antiferromagnetic materials could be key to future high-density, stable memory devices, providing new alternatives to traditional ferromagnetic options.
 

See more applications

Magnetization Reconstruction Through Vector Magnetic Field Measurements

This work demonstrates how vector measurements improve the accuracy of reconstructing current density and magnetization in 2D materials using stray magnetic field data.

All-oxide Magnetoelectric logic

Ramamoorthy Ramesh’s team, using Scanning NV data from Proteus Q, demonstrated ferroelectric control of magnons in BiFeO₃, enabling energy-efficient spin transport for low-dissipation nanoelectronics.

Want to know more?

Talk to us - our Application Scientist is happy to talk with you about what you can do with our Scanning NV Magnetometer ProteusQ.
We are using cookies and analytics tools to give you the best digital experience.
AcceptPrivacy Settings

GDPR

  • Cookie Consent

Cookie Consent

We are using cookies and analytics tools to give you the best digital experience.  Find more information and details about how to switch them off in our Terms of Website Use and Privacy Policy.