Led by Denys Makarov at HZDR, this study reveals a way to create antiferromagnetic bits. The team patterned thin film chromium oxide into nanodots and revealed binary magnetic states in this antiferromagnetic material. The measurements by Peter Rickhaus at the Qnami Application Lab show results that resemble those from ferromagnetic MRAMs observed with scanning NV microscopy (SNVM). This similarity hints that antiferromagnetic materials could be key to future high-density, stable memory devices, providing new alternatives to traditional ferromagnetic options.