Dense ensembles of NV centers used to investigate the correlation between superconductivity and ferromagnetism

Image credit: https://pubs.acs.org/doi/10.1021/acs.nanolett.1c02424

The Fe-chalcogenide superconductor FeTexSe1–x is an interesting material for studying the interaction between topology, superconductivity, and magnetism. Using nitrogen vacancy (NV) centers in diamond, researchers have achieved nanoscale quantum sensing and imaging of magnetic flux in exfoliated FeTexSe1–x flakes, revealing a strong correlation between superconductivity and ferromagnetism. This discovery paves the way for exploring exotic quantum transport phenomena and potential applications in solid-state quantum information technologies.

To enable wide-field imaging with dense NV ensembles, ensuring direct contact between the sample and the diamond surface is essential. The Quantum Foundry provides the expertise to fabricate engineered diamond plates optimized for imaging diverse materials, from 2D systems to large-scale magnetic films.

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Photoinduced Charge Injection from Shallow Point Defects in Diamond into Water

Photoinduced Charge Injection from Shallow Point Defects in Diamond into Water

NV centers fabricated by the Quantum foundry facilitate the injection of electrons into water
A quantum technology for device Failure analysis

A quantum technology for device Failure analysis

Scanning NV Magnetometry (SNVM) is a versatile, high-resolution technique for electronic device failure analysis, enabling precise sensing of currents, temperature, magnetic fields, and AC fields.
Mapping current flow using ProteusQCurrent Flow Mapping in Ferroelectric Domain Walls

Current Flow Mapping in Ferroelectric Domain Walls

In a recent study on conducting ferroelectric domain walls, researchers used scanning NV magnetometry to directly visualize current flow at the nanoscale. These measurements were performed using the Qnami ProteusQ. The results challenge previous assumptions about current distribution and pave the way for more accurate modeling of next-generation memristive devices.

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