Scanning Nitrogen-Vacancy Magnetometry (SNVM) is emerging as a powerful tool for advanced electronic device failure analysis. This technique enables high-resolution, localized sensing of key parameters such as current flow, temperature variations, minute magnetic fields, and AC fields, providing valuable insights into device performance and defects.
As semiconductor technologies continue to scale, traditional failure analysis methods face limitations in resolution and sensitivity. SNVM overcomes these challenges by leveraging quantum sensing principles, offering non-invasive, nanoscale diagnostics for modern electronic components.
With its versatility and precision, SNVM is poised to become an essential technique for future failure analysis, enhancing the reliability and efficiency of next-generation electronic devices.
Read the Introcudotry article published in the Journal of the Electronic Device Failure Analysis Society.
