Quantum Sensing Applications


While Ferromagnets have been used in memory devices for decades, Antiferromagnets have come to focus only recently. Due to their compensated spins, their magnetism is more difficult to use and detect. However, since their stray fields are so small, they have the potential to make ultradense memories a reality. Using the Qnami ProteusQ, their uncompensated spins located at domain walls, crystalline edges or nanostructures are made visible.

Unconventional flexomagnetism in chromium oxide thin films

Applying inhomogeneous strain to chromium oxide thin films induces a strong vertical gradient of the Neel temperature inferred through scanning NV magnetometry measurements.

Nanoscale mechanics of domain walls

Scanning NV Magnetometry unveiled for the first time the nanoscale mechanics of antiferromagnetic domain walls opening new avenues for antiferromagnetic spintronics.

Topological defects in multiferroic antiferromagnetic materials

Qnami Quantilevers enabled the observation of topological defects in multiferroic antiferromagnets at rooom temperature for the first time.

Exotic antiferromagnetic spin cycloids in bismuth ferrite thin films

Scanning NV Magnetometry unlocks the characterization of the effects of strain and electrical fields on exotic antiferromagnetic spin textures in multiferroics.

Imaging non-collinear antiferromagnetic textures via single spin relaxometry—Nature Communications

The team led by Vincent Jacques demonstrates a new method to image spin textures in synthetic antiferromagnets using Qnami QuantileverMX probes.

Antiferromagnetic textures in BiFeO3controlled by strain and electric field – Nature Communications

Team of Prof. V.Garcia from CNRS/Thales shows electrical control of the magnetic states of BFO opening a new playground for low-power spintronics

Electric and antiferromagnetic chiral textures at multiferroic domain walls – Nature Materials

French research group led by Prof. M. Viret uses scanning NV magnetometry to reveal a novel type of chiral spin-textures occurring on BiFeO3’s domain-walls.

Purely antiferromagnetic magnetoelectric Random Access Memory – Nature Communication

D. Makarov and his team demonstrate the first antiferromagnetic memory that can be entirely manipulated and read electrically.
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